SPA11N80C3XKSA1
SPA11N80C3XKSA1
Part Number SPA11N80C3XKSA1
Description MOSFET N-CH 800V 11A TO220FP
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 11A (Tc) 34W (Tc) Through Hole PG-TO220-FP
To learn about the specification of SPA11N80C3XKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SPA11N80C3XKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SPA11N80C3XKSA1.
We are offering SPA11N80C3XKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SPA11N80C3XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPA11N80C3
Standard Package 500
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Tube
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
SPA11N80C3XKSA1 - Related ProductsMore >>
IXTQ26N50P
IXYS, N-Channel 500V 26A (Tc) 400W (Tc) Through Hole TO-3P, PolarHV™
View
TK12A80W,S4X
Toshiba Semiconductor and Storage, N-Channel 800V 11.5A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSIV
View
FDPF39N20
ON Semiconductor, N-Channel 200V 39A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™
View
DMN2028USS-13
Diodes Incorporated, N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO,
View
T2N7002AK,LM
Toshiba Semiconductor and Storage, N-Channel 60V 200mA (Ta) 320mW (Ta) Surface Mount SOT-23, U-MOSVII-H
View
TN2640N3-G
Microchip Technology, N-Channel 400V 220mA (Tj) 740mW (Ta) Through Hole TO-92-3,
View
IPC100N04S51R2ATMA1
Infineon Technologies, N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™
View
IRLR3410TRLPBF
Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®
View
IPN70R1K4P7SATMA1
Infineon Technologies, N-Channel 700V 4A (Tc) 6.2W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
DMN6069SE-13
Diodes Incorporated, N-Channel 60V 4.3A (Ta), 10A (Tc) 2.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
View
STV240N75F3
STMicroelectronics, N-Channel 75V 240A (Tc) 300W (Tc) Surface Mount 10-PowerSO, STripFET™ III
View
TK7S10N1Z,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 7A (Ta) 50W (Tc) Surface Mount DPAK+, U-MOSVIII-H
View
SPA11N80C3XKSA1 - Tags