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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPD,SPP15P10P G
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, SIPMOS®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RU1E002SPTCL
Rohm Semiconductor, P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount UMT3F,
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DMP26M7UFG-7
Diodes Incorporated, P-Channel 20V 18A (Ta), 40A (Tc) 2.3W (Ta) Surface Mount PowerDI3333-8,
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BS250FTA
Diodes Incorporated, P-Channel 45V 90mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,
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BUK6D43-40PX
Nexperia USA Inc., P-Channel 40V 6A (Ta) 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101
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SI7615CDN-T1-GE3
Vishay Siliconix, P-Channel 20V 35A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen III
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SSM6J507NU,LF
Toshiba Semiconductor and Storage, P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
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FQB27P06TM
ON Semiconductor, P-Channel 60V 27A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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TP0610K-T1-E3
Vishay Siliconix, P-Channel 60V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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DMP6185SE-13
Diodes Incorporated, P-Channel 60V 3A (Ta) 1.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
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SPD15P10PLGBTMA1
Infineon Technologies, P-Channel 100V 15A (Tc) 128W (Tc) Surface Mount PG-TO252-3, SIPMOS®
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RW1A020ZPT2R
Rohm Semiconductor, P-Channel 12V 2A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
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SI3415A-TP
Micro Commercial Co, P-Channel 20V 4A 1.4W Surface Mount SOT-23,
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