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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPD,SPP15P10P G
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, SIPMOS®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI2301BDS-T1-GE3
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CSD25404Q3
Texas Instruments, P-Channel 20V 104A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount 8-VSON (3.3x3.3), NexFET™
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SI7465DP-T1-GE3
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TPS1100PWR
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TSM301K12CQ RFG
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IRFR9120TRPBF
Vishay Siliconix, P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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SIA445EDJ-T1-GE3
Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
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SI7615ADN-T1-GE3
Vishay Siliconix, P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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SQ1421EDH-T1_GE3
Vishay Siliconix, P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
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FQB27P06TM
ON Semiconductor, P-Channel 60V 27A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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SI7135DP-T1-GE3
Vishay Siliconix, P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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BSP171PH6327XTSA1
Infineon Technologies, P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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