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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2308CES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 30V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3
SQJA84EP-T1_GE3
Vishay Siliconix, N-Channel 80V 46A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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SQ7414AENW-T1_GE3
Vishay Siliconix, N-Channel 60V 18A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8,
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IRLD024PBF
Vishay Siliconix, N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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ZVN4525GTA
Diodes Incorporated, N-Channel 250V 310mA (Ta) 2W (Ta) Surface Mount SOT-223,
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BUK7M17-80EX
Nexperia USA Inc., N-Channel 80V 43A (Tc) 79W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101
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SI3438DV-T1-GE3
Vishay Siliconix, N-Channel 40V 7.4A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP, TrenchFET®
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FDD10N20LZTM
ON Semiconductor, N-Channel 200V 7.6A (Tc) 83W (Tc) Surface Mount DPAK, UniFET™
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PMV20ENR
Nexperia USA Inc., N-Channel 30V 6A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB,
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BUK768R1-40E,118
Nexperia USA Inc., N-Channel 40V 75A (Tc) 96W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IRLU014PBF
Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,
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SUP90142E-GE3
Vishay Siliconix, N-Channel 200V 90A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®
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IPA65R190CFDXKSA1
Infineon Technologies, N-Channel 650V 17.5A (Tc) 34W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™
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