Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2325ES-T1_GE3

SQ2325ES-T1_GE3

SQ2325ES-T1_GE3

Part NumberSQ2325ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 840MA TO236

DatasheetSQ2325ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 840mA (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2325ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2325ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2325ES-T1_GE3.
We are offering SQ2325ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2325ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2325ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 50V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2325ES-T1_GE3 - Related Products

	FDMS6681Z	ON Semiconductor, P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SIA427DJ-T1-GE3	Vishay Siliconix, P-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	DMP10H400SE-13	Diodes Incorporated, P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223,	View
	BSS308PEH6327XTSA1	Infineon Technologies, P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	MCH3333A-TL-W	ON Semiconductor, P-Channel 30V 2A (Ta) 900mW (Ta) Surface Mount SC-70FL/MCPH3,	View
	RD3H200SNTL1	Rohm Semiconductor, N-Channel 45V 20A (Ta) 20W (Tc) Surface Mount TO-252,	View
	SISS67DN-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen III	View
	BSS314PEH6327XTSA1	Infineon Technologies, P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	SQ4005EY-T1_GE3	Vishay Siliconix, P-Channel 12V 15A (Tc) 6W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View
	DMP2002UPS-13	Diodes Incorporated, P-Channel 20V 60A (Tc) 2.3W (Ta) Surface Mount PowerDI5060-8,	View
	ZXMP10A16KTC	Diodes Incorporated, P-Channel 100V 3A (Ta) 2.15W (Ta) Surface Mount TO-252-3,	View
	SI6415DQ-T1-E3	Vishay Siliconix, P-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View

SQ2325ES-T1_GE3 - Tags

SQ2325ES-T1_GE3 SQ2325ES-T1_GE3 PDF SQ2325ES-T1_GE3 datasheet SQ2325ES-T1_GE3 specification SQ2325ES-T1_GE3 image SQ2325ES-T1_GE3 India Renesas Electronics India SQ2325ES-T1_GE3 buy SQ2325ES-T1_GE3 SQ2325ES-T1_GE3 price SQ2325ES-T1_GE3 distributor SQ2325ES-T1_GE3 supplier SQ2325ES-T1_GE3 wholesales