Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2361AEES-T1_GE3

SQ2361AEES-T1_GE3

SQ2361AEES-T1_GE3

Part NumberSQ2361AEES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 2.5A SSOT23

DatasheetSQ2361AEES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

To learn about the specification of SQ2361AEES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2361AEES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2361AEES-T1_GE3.
We are offering SQ2361AEES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2361AEES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2361AEES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2361AEES-T1_GE3 - Related Products

	FDN352AP	ON Semiconductor, P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	IXTP52P10P	IXYS, P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-220AB, PolarP™	View
	IRF6217TRPBF	Infineon Technologies, P-Channel 150V 700mA (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SI4463CDY-T1-GE3	Vishay Siliconix, P-Channel 20V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI8409DB-T1-E1	Vishay Siliconix, P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	PMFPB8032XP,115	Nexperia USA Inc., P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2),	View
	ZVP2106A	Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
	BSZ086P03NS3GATMA1	Infineon Technologies, P-Channel 30V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	DMP1022UFDF-7	Diodes Incorporated, P-Channel 12V 9.5A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	IRFR9214TRPBF	Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount DPAK,	View
	SISA01DN-T1-GE3	Vishay Siliconix, P-Channel 30V 22.4A (Ta), 60A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View
	DMP2008UFG-13	Diodes Incorporated, P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8,	View

SQ2361AEES-T1_GE3 - Tags

SQ2361AEES-T1_GE3 SQ2361AEES-T1_GE3 PDF SQ2361AEES-T1_GE3 datasheet SQ2361AEES-T1_GE3 specification SQ2361AEES-T1_GE3 image SQ2361AEES-T1_GE3 India Renesas Electronics India SQ2361AEES-T1_GE3 buy SQ2361AEES-T1_GE3 SQ2361AEES-T1_GE3 price SQ2361AEES-T1_GE3 distributor SQ2361AEES-T1_GE3 supplier SQ2361AEES-T1_GE3 wholesales