Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2361ES-T1_GE3

SQ2361ES-T1_GE3

SQ2361ES-T1_GE3

Part NumberSQ2361ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 2.5A SSOT23

DatasheetSQ2361ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

To learn about the specification of SQ2361ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2361ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2361ES-T1_GE3.
We are offering SQ2361ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2361ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2361ES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	177mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2361ES-T1_GE3 - Related Products

	BSP171PH6327XTSA1	Infineon Technologies, P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	BSS84PH6327XTSA2	Infineon Technologies, P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	SI3443DDV-T1-GE3	Vishay Siliconix, P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	RQ5E025ATTCL	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 1W (Tc) Surface Mount TSMT3,	View
	SUD50P10-43L-GE3	Vishay Siliconix, P-Channel 100V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252, TrenchFET®	View
	SI4829DY-T1-GE3	Vishay Siliconix, P-Channel 20V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO, LITTLE FOOT®	View
	SSM3J35CT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI	View
	NVD5117PLT4G-VF01	ON Semiconductor, P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK,	View
	SI2333DS-T1-E3	Vishay Siliconix, P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	ZXMP3A16N8TA	Diodes Incorporated, P-Channel 30V 5.6A (Ta) 1.9W (Ta) Surface Mount 8-SO,	View
	DMG7401SFGQ-7	Diodes Incorporated, P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,	View
	CSD25501F3T	Texas Instruments, P-Channel 20V 3.6A (Ta) 500mW (Ta) Surface Mount 3-LGA (0.73x0.64), FemtoFET™	View

SQ2361ES-T1_GE3 - Tags

SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 PDF SQ2361ES-T1_GE3 datasheet SQ2361ES-T1_GE3 specification SQ2361ES-T1_GE3 image SQ2361ES-T1_GE3 India Renesas Electronics India SQ2361ES-T1_GE3 buy SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 price SQ2361ES-T1_GE3 distributor SQ2361ES-T1_GE3 supplier SQ2361ES-T1_GE3 wholesales