Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

Part NumberSQ2364EES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V SOT-23

DatasheetSQ2364EES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2364EES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2364EES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2364EES-T1_GE3.
We are offering SQ2364EES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2364EES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2364EES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2364EES-T1_GE3 - Related Products

	STD60NF55LT4	STMicroelectronics, N-Channel 55V 60A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View
	BVSS138LT1G	ON Semiconductor, N-Channel 50V 200mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,	View
	FQD5N20LTM	ON Semiconductor, N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak, QFET®	View
	AOD508	Alpha & Omega Semiconductor Inc., N-Channel 30V 22A (Ta), 70A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252, (D-Pak),	View
	IPA60R099P7XKSA1	Infineon Technologies, N-Channel 600V 31A (Tc) 29W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	IRFP240PBF	Vishay Siliconix, N-Channel 200V 20A (Tc) 150W (Tc) Through Hole TO-247-3,	View
	PMCM4401UNEZ	Nexperia USA Inc., N-Channel 20V 400mW Surface Mount 4-WLCSP (2x2),	View
	RD3L080SNTL1	Rohm Semiconductor, N-Channel 60V 8A (Ta) 15W (Tc) Surface Mount TO-252,	View
	IXFN44N80Q3	IXYS, N-Channel 800V 37A (Tc) 780W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	BUK7Y53-100B,115	Nexperia USA Inc., N-Channel 100V 24.8A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	VS-FB190SA10	Vishay Semiconductor Diodes Division, N-Channel 100V 190A 568W (Tc) Chassis Mount SOT-227,	View
	IPB120N04S401ATMA1	Infineon Technologies, N-Channel 40V 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View

SQ2364EES-T1_GE3 - Tags

SQ2364EES-T1_GE3 SQ2364EES-T1_GE3 PDF SQ2364EES-T1_GE3 datasheet SQ2364EES-T1_GE3 specification SQ2364EES-T1_GE3 image SQ2364EES-T1_GE3 India Renesas Electronics India SQ2364EES-T1_GE3 buy SQ2364EES-T1_GE3 SQ2364EES-T1_GE3 price SQ2364EES-T1_GE3 distributor SQ2364EES-T1_GE3 supplier SQ2364EES-T1_GE3 wholesales