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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD100N03-3M4
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7349pF @ 15V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7Y102-100B,115
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SIR638DP-T1-GE3
Vishay Siliconix, N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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SI7326DN-T1-GE3
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PMZ130UNEYL
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SIHG30N60E-GE3
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BUK768R1-100E,118
Nexperia USA Inc., N-Channel 100V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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NVMFS5H663NLT1G
ON Semiconductor, N-Channel 60V 16.2A (Ta), 67A (Tc) 3.7W (Ta), 63W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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