SQD100N04-3M6L_GE3
SQD100N04-3M6L_GE3
Part Number SQD100N04-3M6L_GE3
Description MOSFET N-CH 40V 100A TO252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA
To learn about the specification of SQD100N04-3M6L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD100N04-3M6L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD100N04-3M6L_GE3.
We are offering SQD100N04-3M6L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQD100N04-3M6L_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD100N04-3M6L
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6700pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQD100N04-3M6L_GE3 - Related ProductsMore >>
IRFH7085TRPBF
Infineon Technologies, N-Channel 60V 100A (Tc) 156W (Tc) Surface Mount PQFN (5x6), StrongIRFET™
View
BSC057N03MSGATMA1
Infineon Technologies, N-Channel 30V 15A (Ta), 71A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
View
IRFS4115TRLPBF
Infineon Technologies, N-Channel 150V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
View
NTJS3157NT1G
ON Semiconductor, N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363,
View
IPC50N04S55R8ATMA1
Infineon Technologies, N-Channel 40V 50A (Tc) 42W (Tc) Surface Mount PG-TDSON-8-33, OptiMOS™
View
STP17NF25
STMicroelectronics, N-Channel 250V 17A (Tc) 90W (Tc) Through Hole TO-220AB, STripFET™ II
View
FQD2N90TM
ON Semiconductor, N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
View
SSM3K341TU,LF
Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 1.8W (Ta) Surface Mount UFM, U-MOSVIII-H
View
IXFT44N50P
IXYS, N-Channel 500V 44A (Tc) 658W (Tc) Surface Mount TO-268, HiPerFET™, PolarHT™
View
FDMC86324
ON Semiconductor, N-Channel 80V 7A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33, PowerTrench®
View
IRF3708PBF
Infineon Technologies, N-Channel 30V 62A (Tc) 87W (Tc) Through Hole TO-220AB, HEXFET®
View
SUM70030E-GE3
Vishay Siliconix, N-Channel 100V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®
View
SQD100N04-3M6L_GE3 - Tags