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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD25N15-52
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH6004SK3-13
Diodes Incorporated, N-Channel 60V 100A (Tc) 3.9W (Ta), 180W (Tc) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101
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SIHP8N50D-GE3
Vishay Siliconix, N-Channel 500V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB,
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STW32NM50N
STMicroelectronics, N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247, MDmesh™ II
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FDD6N50TM-WS
ON Semiconductor, N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount D-Pak, UniFET™
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BSH103,235
Nexperia USA Inc., N-Channel 30V 850mA (Ta) 540mW (Ta) Surface Mount TO-236AB,
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SQJ402EP-T1_GE3
Vishay Siliconix, N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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FDS2672
ON Semiconductor, N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™
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NTJS3157NT1G
ON Semiconductor, N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363,
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CPH3459-TL-W
ON Semiconductor, N-Channel 200V 500mA (Ta) 1W (Ta) Surface Mount 3-CPH,
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IRF1010NPBF
Infineon Technologies, N-Channel 55V 85A (Tc) 180W (Tc) Through Hole TO-220AB, HEXFET®
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SIHP7N60E-GE3
Vishay Siliconix, N-Channel 600V 7A (Tc) 78W (Tc) Through Hole TO-220AB,
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SPW35N60C3FKSA1
Infineon Technologies, N-Channel 650V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3, CoolMOS™
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