Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQD50N06-09L_GE3

SQD50N06-09L_GE3

SQD50N06-09L_GE3

Part NumberSQD50N06-09L_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 50A

DatasheetSQD50N06-09L

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak)

To learn about the specification of SQD50N06-09L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD50N06-09L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD50N06-09L_GE3.
We are offering SQD50N06-09L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQD50N06-09L_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQD50N06-09L
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3065pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SQD50N06-09L_GE3 - Related Products

	IPB015N08N5ATMA1	Infineon Technologies, N-Channel 80V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	RUM002N02T2L	Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,	View
	STD45N10F7	STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VII	View
	IXTA130N15X4	IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Surface Mount TO-263AA,	View
	TK5P60W,RVQ	Toshiba Semiconductor and Storage, N-Channel 600V 5.4A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV	View
	FDS4470	ON Semiconductor, N-Channel 40V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SI7850DP-T1-GE3	Vishay Siliconix, N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRFS4615TRLPBF	Infineon Technologies, N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D2PAK, HEXFET®	View
	FDMS7678	ON Semiconductor, N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SSM3K344R,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H	View
	FDMC3020DC	ON Semiconductor, N-Channel 30V 17A (Ta), 40A (Tc) 3W (Ta), 50W (Tc) Surface Mount Dual Cool ™ 33, Dual Cool™, PowerTrench®	View
	PMZB290UNE2YL	Nexperia USA Inc., N-Channel 20V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3,	View

SQD50N06-09L_GE3 - Tags

SQD50N06-09L_GE3 SQD50N06-09L_GE3 PDF SQD50N06-09L_GE3 datasheet SQD50N06-09L_GE3 specification SQD50N06-09L_GE3 image SQD50N06-09L_GE3 India Renesas Electronics India SQD50N06-09L_GE3 buy SQD50N06-09L_GE3 SQD50N06-09L_GE3 price SQD50N06-09L_GE3 distributor SQD50N06-09L_GE3 supplier SQD50N06-09L_GE3 wholesales