Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQD50N10-8M9L_GE3

SQD50N10-8M9L_GE3

SQD50N10-8M9L_GE3

Part NumberSQD50N10-8M9L_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 100V TO252

DatasheetSQD50N10-8M9L

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

To learn about the specification of SQD50N10-8M9L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD50N10-8M9L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD50N10-8M9L_GE3.
We are offering SQD50N10-8M9L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQD50N10-8M9L_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQD50N10-8M9L
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SQD50N10-8M9L_GE3 - Related Products

	CSD19536KTT	Texas Instruments, N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	IXFP38N30X3	IXYS, N-Channel 300V 38A (Tc) 240W (Tc) Through Hole TO-220, HiPerFET™	View
	R6012JNJGTL	Rohm Semiconductor, N-Channel 600V 12A (Tc) 160W (Tc) Surface Mount LPTS (D2PAK),	View
	IXTK60N50L2	IXYS, N-Channel 500V 60A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™	View
	FDN361BN	ON Semiconductor, N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	BSC050NE2LSATMA1	Infineon Technologies, N-Channel 25V 39A (Ta), 58A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	SIHH11N65EF-T1-GE3	Vishay Siliconix, N-Channel 650V 11A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	FDS6574A	ON Semiconductor, N-Channel 20V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	BUK7606-75B,118	Nexperia USA Inc., N-Channel 75V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	RUE003N02TL	Rohm Semiconductor, N-Channel 20V 300mA (Ta) 150mW (Ta) Surface Mount EMT3,	View
	CSD16413Q5A	Texas Instruments, N-Channel 25V 24A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	SQD100N04-3M6L_GE3	Vishay Siliconix, N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA,	View

SQD50N10-8M9L_GE3 - Tags

SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3 PDF SQD50N10-8M9L_GE3 datasheet SQD50N10-8M9L_GE3 specification SQD50N10-8M9L_GE3 image SQD50N10-8M9L_GE3 India Renesas Electronics India SQD50N10-8M9L_GE3 buy SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3 price SQD50N10-8M9L_GE3 distributor SQD50N10-8M9L_GE3 supplier SQD50N10-8M9L_GE3 wholesales