Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQD50N10-8M9L_GE3

SQD50N10-8M9L_GE3

SQD50N10-8M9L_GE3

Part NumberSQD50N10-8M9L_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 100V TO252

DatasheetSQD50N10-8M9L

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

To learn about the specification of SQD50N10-8M9L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD50N10-8M9L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD50N10-8M9L_GE3.
We are offering SQD50N10-8M9L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQD50N10-8M9L_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQD50N10-8M9L
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SQD50N10-8M9L_GE3 - Related Products

	IRFZ48NSTRLPBF	Infineon Technologies, N-Channel 55V 64A (Tc) 3.8W (Ta), 130W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI7172DP-T1-GE3	Vishay Siliconix, N-Channel 200V 25A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRLML0100TRPBF	Infineon Technologies, N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	FDMS8050	ON Semiconductor, N-Channel 30V 55A (Tc) 156W (Tc) Surface Mount 8-PQFN (5x6),	View
	NTD4302T4G	ON Semiconductor, N-Channel 30V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W (Tc) Surface Mount DPAK,	View
	AOT66616L	Alpha & Omega Semiconductor Inc., N-Channel 60V 38.5A (Ta), 140A (Tc) 8.3W (Ta), 125W (Tc) Through Hole TO-220, AlphaSGT™	View
	SI2300-TP	Micro Commercial Co, N-Channel 20V 4.5A 1W Surface Mount SOT-23,	View
	SI7478DP-T1-GE3	Vishay Siliconix, N-Channel 60V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IXFH52N30Q	IXYS, N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	CSD18510KTT	Texas Instruments, N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3, NexFET™	View
	R6030KNX	Rohm Semiconductor, N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-220FM,	View
	FQPF11N40C	ON Semiconductor, N-Channel 400V 10.5A (Tc) 44W (Tc) Through Hole TO-220F, QFET®	View

SQD50N10-8M9L_GE3 - Tags

SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3 PDF SQD50N10-8M9L_GE3 datasheet SQD50N10-8M9L_GE3 specification SQD50N10-8M9L_GE3 image SQD50N10-8M9L_GE3 India Renesas Electronics India SQD50N10-8M9L_GE3 buy SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3 price SQD50N10-8M9L_GE3 distributor SQD50N10-8M9L_GE3 supplier SQD50N10-8M9L_GE3 wholesales