Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ409EP-T1_GE3

SQJ409EP-T1_GE3

SQJ409EP-T1_GE3

Part NumberSQJ409EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 60A POWERPAKSO-8

DatasheetSQJ409EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ409EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ409EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ409EP-T1_GE3.
We are offering SQJ409EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ409EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ409EP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 25V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ409EP-T1_GE3 - Related Products

	SI7415DN-T1-GE3	Vishay Siliconix, P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	TSM500P02CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	SI4427BDY-T1-GE3	Vishay Siliconix, P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount, TrenchFET®	View
	SI3457CDV-T1-GE3	Vishay Siliconix, P-Channel 30V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SSM6J501NU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View
	IRFR9120PBF	Vishay Siliconix, P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	FQU5P20TU	ON Semiconductor, P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®	View
	6HP04MH-TL-W	ON Semiconductor, P-Channel 60V 370mA (Ta) 600mW (Ta) Surface Mount SC-70FL/MCPH3,	View
	SQJ457EP-T1_GE3	Vishay Siliconix, P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IRFR5305TRLPBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SUD40151EL-GE3	Vishay Siliconix, P-Channel 40V 42A (Tc) 50W (Tc) Surface Mount TO-252AA, TrenchFET® Gen IV	View
	ZXM62P03E6TA	Diodes Incorporated, P-Channel 30V 1.5A (Ta) 625mW (Ta) Surface Mount SOT-26,	View

SQJ409EP-T1_GE3 - Tags

SQJ409EP-T1_GE3 SQJ409EP-T1_GE3 PDF SQJ409EP-T1_GE3 datasheet SQJ409EP-T1_GE3 specification SQJ409EP-T1_GE3 image SQJ409EP-T1_GE3 India Renesas Electronics India SQJ409EP-T1_GE3 buy SQJ409EP-T1_GE3 SQJ409EP-T1_GE3 price SQJ409EP-T1_GE3 distributor SQJ409EP-T1_GE3 supplier SQJ409EP-T1_GE3 wholesales