Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

Part NumberSQJ412EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 32A PPAK SO-8

DatasheetSQJ412EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ412EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ412EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ412EP-T1_GE3.
We are offering SQJ412EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ412EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ412EP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5950pF @ 20V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ412EP-T1_GE3 - Related Products

	NTNS3193NZT5G	ON Semiconductor, N-Channel 20V 224mA (Ta) 120mW (Ta) Surface Mount 3-XLLGA (0.62x0.62),	View
	BUK9217-75B,118	Nexperia USA Inc., N-Channel 75V 64A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	NTMFS6H818NT1G	ON Semiconductor, N-Channel 80V 20A (Ta), 123A (Tc) 3.8W (Ta), 136W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	SIR876ADP-T1-GE3	Vishay Siliconix, N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FQP5N60C	ON Semiconductor, N-Channel 600V 4.5A (Tc) 100W (Tc) Through Hole TO-220-3, QFET®	View
	SI4134DY-T1-GE3	Vishay Siliconix, N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	BSC030N08NS5ATMA1	Infineon Technologies, N-Channel 80V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	SI3134KL-TP	Micro Commercial Co, Surface Mount SOT-883,	View
	FDC637AN	ON Semiconductor, N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	BSC120N03MSGATMA1	Infineon Technologies, N-Channel 30V 11A (Ta), 39A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	CSD17484F4T	Texas Instruments, N-Channel 30V 3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	BUK9275-100A,118	Nexperia USA Inc., N-Channel 100V 21.7A (Tc) 88W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View

SQJ412EP-T1_GE3 - Tags

SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 PDF SQJ412EP-T1_GE3 datasheet SQJ412EP-T1_GE3 specification SQJ412EP-T1_GE3 image SQJ412EP-T1_GE3 India Renesas Electronics India SQJ412EP-T1_GE3 buy SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 price SQJ412EP-T1_GE3 distributor SQJ412EP-T1_GE3 supplier SQJ412EP-T1_GE3 wholesales