SQJ412EP-T1_GE3


SQJ412EP-T1_GE3

Part NumberSQJ412EP-T1_GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SQJ412EP-T1_GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.1mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5950pF @ 20V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

SQJ412EP-T1_GE3 - Related Products

More >>
IRFR1N60ATRLPBF Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak, View
IRFB7787PBF Infineon Technologies, N-Channel 75V 76A (Tc) 125W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™ View
STH275N8F7-6AG STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™ F7 View
BUK9Y14-80E,115 Nexperia USA Inc., N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™ View
BSZ042N06NSATMA1 Infineon Technologies, N-Channel 60V 17A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™ View
NTMFS4821NT1G ON Semiconductor, N-Channel 30V 8.8A (Ta), 58.5A (Tc) 870mW (Ta), 38.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), View
DMN2005UPS-13 Diodes Incorporated, N-Channel 20V 20A (Ta), 100A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8, View
STN4NF06L STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II View
TSM2N100CH C5G Taiwan Semiconductor Corporation, N-Channel 1000V 1.85A (Tc) 77W (Tc) Through Hole TO-251 (IPAK), View
FQB50N06LTM ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET® View
SIRA14BDP-T1-GE3 Vishay Siliconix, N-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV View
IRF200B211 Infineon Technologies, N-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™ View

SQJ412EP-T1_GE3 - Tags

SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 PDF SQJ412EP-T1_GE3 datasheet SQJ412EP-T1_GE3 specification SQJ412EP-T1_GE3 image SQJ412EP-T1_GE3 India Renesas Electronics India SQJ412EP-T1_GE3 buy SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 price SQJ412EP-T1_GE3 distributor SQJ412EP-T1_GE3 supplier SQJ412EP-T1_GE3 wholesales