Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ414EP-T1_GE3

SQJ414EP-T1_GE3

SQJ414EP-T1_GE3

Part NumberSQJ414EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 30A POWERPAKSOL

DatasheetSQJ414EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ414EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ414EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ414EP-T1_GE3.
We are offering SQJ414EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ414EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ414EP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 15V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ414EP-T1_GE3 - Related Products

	STB30NF10T4	STMicroelectronics, N-Channel 100V 35A (Tc) 115W (Tc) Surface Mount D2PAK, STripFET™ II	View
	FDS86242	ON Semiconductor, N-Channel 150V 4.1A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC, PowerTrench®	View
	STD11NM65N	STMicroelectronics, N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ II	View
	IXTA8N65X2	IXYS, N-Channel 650V 8A (Tc) 150W (Tc) Surface Mount TO-263,	View
	AUIRF540Z	Infineon Technologies, N-Channel 100V 36A (Tc) 92W (Tc) Through Hole TO-220AB, HEXFET®	View
	IPB180N08S402ATMA1	Infineon Technologies, N-Channel 80V 180A (Tc) 277W (Tc) Surface Mount PG-TO263-7-3, Automotive, AEC-Q101, OptiMOS™	View
	STB80NF55-08AG	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D²PAK, Automotive, AEC-Q101, STripFET™	View
	RJU003N03T106	Rohm Semiconductor, N-Channel 30V 300mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	SIR402DP-T1-GE3	Vishay Siliconix, N-Channel 30V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SN7002WH6327XTSA1	Infineon Technologies, N-Channel 60V 230mA (Ta) 500mW (Ta) Surface Mount PG-SOT323-3, SIPMOS®	View
	TK7A90E,S4X	Toshiba Semiconductor and Storage, N-Channel 900V 7A (Ta) 45W (Tc) Through Hole TO-220SIS, π-MOSVIII	View
	IRL640STRLPBF	Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View

SQJ414EP-T1_GE3 - Tags

SQJ414EP-T1_GE3 SQJ414EP-T1_GE3 PDF SQJ414EP-T1_GE3 datasheet SQJ414EP-T1_GE3 specification SQJ414EP-T1_GE3 image SQJ414EP-T1_GE3 India Renesas Electronics India SQJ414EP-T1_GE3 buy SQJ414EP-T1_GE3 SQJ414EP-T1_GE3 price SQJ414EP-T1_GE3 distributor SQJ414EP-T1_GE3 supplier SQJ414EP-T1_GE3 wholesales