Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ422EP-T1_GE3

SQJ422EP-T1_GE3

SQJ422EP-T1_GE3

Part NumberSQJ422EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 75A PPAK SO-8

DatasheetSQJ422EP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 74A (Tc) 83W (Tc) Surface Mount

To learn about the specification of SQJ422EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ422EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ422EP-T1_GE3.
We are offering SQJ422EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ422EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ422EP-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4660pF @ 20V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8

SQJ422EP-T1_GE3 - Related Products

	IPD70N03S4L04ATMA1	Infineon Technologies, N-Channel 30V 70A (Tc) 68W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	BS170-D26Z	ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,	View
	BUK7222-55A,118	Nexperia USA Inc., N-Channel 55V 48A (Tc) 103W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	IPD082N10N3GATMA1	Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	SIR670DP-T1-GE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	CSD19532KTTT	Texas Instruments, N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	IXFH50N30Q3	IXYS, N-Channel 300V 50A (Tc) 690W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	BUK9629-100B,118	Nexperia USA Inc., N-Channel 100V 46A (Tc) 157W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STH270N8F7-2	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²PAK, DeepGATE™, STripFET™ VII	View
	IRLB3036PBF	Infineon Technologies, N-Channel 60V 195A (Tc) 380W (Tc) Through Hole TO-220AB, HEXFET®	View
	NVMFS6H864NT1G	ON Semiconductor, N-Channel 80V 6.7A (Ta), 21A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	FDB13AN06A0	ON Semiconductor, N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK, PowerTrench®	View

SQJ422EP-T1_GE3 - Tags

SQJ422EP-T1_GE3 SQJ422EP-T1_GE3 PDF SQJ422EP-T1_GE3 datasheet SQJ422EP-T1_GE3 specification SQJ422EP-T1_GE3 image SQJ422EP-T1_GE3 India Renesas Electronics India SQJ422EP-T1_GE3 buy SQJ422EP-T1_GE3 SQJ422EP-T1_GE3 price SQJ422EP-T1_GE3 distributor SQJ422EP-T1_GE3 supplier SQJ422EP-T1_GE3 wholesales