Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ422EP-T1_GE3

SQJ422EP-T1_GE3

SQJ422EP-T1_GE3

Part NumberSQJ422EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 75A PPAK SO-8

DatasheetSQJ422EP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 74A (Tc) 83W (Tc) Surface Mount

To learn about the specification of SQJ422EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ422EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ422EP-T1_GE3.
We are offering SQJ422EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ422EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ422EP-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4660pF @ 20V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8

SQJ422EP-T1_GE3 - Related Products

	FDMS0312AS	ON Semiconductor, N-Channel 30V 18A (Ta), 22A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	FQD13N10LTM	ON Semiconductor, N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak, QFET®	View
	SQD25N06-22L_T4GE3	Vishay Siliconix, N-Channel 60V 25A (Tc) 62W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	NTLUS030N03CTAG	ON Semiconductor, N-Channel 30V 4.5A (Ta) 640mW (Ta) Surface Mount 6-UDFN (1.6x1.6), µCool™	View
	IRFB5615PBF	Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB,	View
	FDS8690	ON Semiconductor, N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	FDPF10N50FT	ON Semiconductor, N-Channel 500V 9A (Tc) 42W (Tc) Through Hole TO-220F, UniFET™	View
	SI7806ADN-T1-E3	Vishay Siliconix, N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	STW33N60DM2	STMicroelectronics, N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-247, MDmesh™ DM2	View
	SIHB16N50C-E3	Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),	View
	BUK9Y4R4-40E,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	FDD3690	ON Semiconductor, N-Channel 100V 22A (Tc) 3.8W (Ta), 60W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®	View

SQJ422EP-T1_GE3 - Tags

SQJ422EP-T1_GE3 SQJ422EP-T1_GE3 PDF SQJ422EP-T1_GE3 datasheet SQJ422EP-T1_GE3 specification SQJ422EP-T1_GE3 image SQJ422EP-T1_GE3 India Renesas Electronics India SQJ422EP-T1_GE3 buy SQJ422EP-T1_GE3 SQJ422EP-T1_GE3 price SQJ422EP-T1_GE3 distributor SQJ422EP-T1_GE3 supplier SQJ422EP-T1_GE3 wholesales