Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ872EP-T1_GE3

SQJ872EP-T1_GE3

SQJ872EP-T1_GE3

Part NumberSQJ872EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 150V

DatasheetSQJ872EP

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ872EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ872EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ872EP-T1_GE3.
We are offering SQJ872EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ872EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ872EP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	24.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	35.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1045pF @ 25V
FET Feature	-
Power Dissipation (Max)	55W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	8-PowerTDFN

SQJ872EP-T1_GE3 - Related Products

	BSC030N03MSGATMA1	Infineon Technologies, N-Channel 30V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SI8424CDB-T1-E1	Vishay Siliconix, N-Channel 8V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	PSMN1R5-40PS,127	Nexperia USA Inc., N-Channel 40V 120A (Tc) 338W (Tc) Through Hole TO-220AB,	View
	AON6242	Alpha & Omega Semiconductor Inc., N-Channel 60V 18.5A (Ta), 85A (Tc) 2.3W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6),	View
	TSM3N90CI C0G	Taiwan Semiconductor Corporation, N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole ITO-220AB,	View
	IRF7413ZTRPBF	Infineon Technologies, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IXFH6N100	IXYS, N-Channel 1000V 6A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	R6011ENJTL	Rohm Semiconductor, N-Channel 600V 11A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),	View
	TSM340N06CP ROG	Taiwan Semiconductor Corporation, N-Channel 60V 30A (Tc) 66W (Tc) Surface Mount TO-252, (D-Pak),	View
	ZXMN6A07FTA	Diodes Incorporated, N-Channel 60V 1.2A (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	IXTY08N100D2	IXYS, N-Channel 1000V 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak),	View
	DMN31D5UFZ-7B	Diodes Incorporated, N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3,	View

SQJ872EP-T1_GE3 - Tags

SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 PDF SQJ872EP-T1_GE3 datasheet SQJ872EP-T1_GE3 specification SQJ872EP-T1_GE3 image SQJ872EP-T1_GE3 India Renesas Electronics India SQJ872EP-T1_GE3 buy SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 price SQJ872EP-T1_GE3 distributor SQJ872EP-T1_GE3 supplier SQJ872EP-T1_GE3 wholesales