Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ100EL-T1_GE3

SQJQ100EL-T1_GE3

SQJQ100EL-T1_GE3

Part NumberSQJQ100EL-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 200A POWERPAK8

DatasheetSQJQ100EL

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ100EL-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ100EL-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ100EL-T1_GE3.
We are offering SQJQ100EL-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ100EL-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ100EL
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14500pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SQJQ100EL-T1_GE3 - Related Products

	SI4464DY-T1-GE3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IPP65R125C7XKSA1	Infineon Technologies, N-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7	View
	IRLML0040TRPBF	Infineon Technologies, N-Channel 40V 3.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	AO3406	Alpha & Omega Semiconductor Inc., N-Channel 30V 3.6A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	HUF75321D3ST	ON Semiconductor, N-Channel 55V 20A (Tc) 93W (Tc) Surface Mount TO-252AA, UltraFET™	View
	SI2366DS-T1-GE3	Vishay Siliconix, N-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	STD11NM60ND	STMicroelectronics, N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK, FDmesh™ II	View
	SUP90140E-GE3	Vishay Siliconix, N-Channel 200V 90A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®	View
	SI2302CDS-T1-GE3	Vishay Siliconix, N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SPU07N60C3BKMA1	Infineon Technologies, N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO251-3, CoolMOS™	View
	R6020FNJTL	Rohm Semiconductor, N-Channel 600V 20A (Tc) 50W (Tc) Surface Mount LPTS,	View
	SISS06DN-T1-GE3	Vishay Siliconix, N-Channel 30V 47.6A (Ta), 172.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View

SQJQ100EL-T1_GE3 - Tags

SQJQ100EL-T1_GE3 SQJQ100EL-T1_GE3 PDF SQJQ100EL-T1_GE3 datasheet SQJQ100EL-T1_GE3 specification SQJQ100EL-T1_GE3 image SQJQ100EL-T1_GE3 India Renesas Electronics India SQJQ100EL-T1_GE3 buy SQJQ100EL-T1_GE3 SQJQ100EL-T1_GE3 price SQJQ100EL-T1_GE3 distributor SQJQ100EL-T1_GE3 supplier SQJQ100EL-T1_GE3 wholesales