Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ410EL-T1_GE3

SQJQ410EL-T1_GE3

SQJQ410EL-T1_GE3

Part NumberSQJQ410EL-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 200A POWERPAK8

DatasheetSQJQ410EL

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ410EL-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ410EL-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ410EL-T1_GE3.
We are offering SQJQ410EL-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ410EL-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ410EL
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14500pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SQJQ410EL-T1_GE3 - Related Products

	STP265N6F6AG	STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Through Hole TO-220, Automotive, AEC-Q101, STripFET™ F6	View
	IRFZ46NSTRLPBF	Infineon Technologies, N-Channel 55V 53A (Tc) 3.8W (Ta), 107W (Tc) Surface Mount D2PAK, HEXFET®	View
	FDMS86568-F085	ON Semiconductor, N-Channel 60V 80A (Tc) 214W (Tj) Surface Mount Power56, Automotive, AEC-Q101, PowerTrench®	View
	PSMN0R9-25YLDX	Nexperia USA Inc., N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	PMCM6501UNEZ	Nexperia USA Inc., N-Channel 20V 400mW Surface Mount 6-WLCSP (1.48x.98),	View
	CSD18531Q5A	Texas Instruments, N-Channel 60V 19A (Ta), 100A (Tc) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	APT38N60BC6	Microsemi Corporation, N-Channel 600V 38A (Tc) 278W (Tc) Through Hole TO-247 [B], CoolMOS™	View
	R6011KNJTL	Rohm Semiconductor, N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-263,	View
	IPW60R040C7XKSA1	Infineon Technologies, N-Channel 600V 50A (Tc) 227W (Tc) Through Hole PG-TO247-3, CoolMOS™ C7	View
	DMN3065LW-13	Diodes Incorporated, N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323,	View
	TSM850N06CX RFG	Taiwan Semiconductor Corporation, N-Channel 60V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23,	View
	CSD18510Q5B	Texas Instruments, N-Channel 40V 300A (Tc) 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View

SQJQ410EL-T1_GE3 - Tags

SQJQ410EL-T1_GE3 SQJQ410EL-T1_GE3 PDF SQJQ410EL-T1_GE3 datasheet SQJQ410EL-T1_GE3 specification SQJQ410EL-T1_GE3 image SQJQ410EL-T1_GE3 India Renesas Electronics India SQJQ410EL-T1_GE3 buy SQJQ410EL-T1_GE3 SQJQ410EL-T1_GE3 price SQJQ410EL-T1_GE3 distributor SQJQ410EL-T1_GE3 supplier SQJQ410EL-T1_GE3 wholesales