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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120N02-1M3L
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 10V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK72E08N1,S1X
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IXYS, N-Channel 500V 100A (Tc) 1890W (Tc) Through Hole PLUS264™, HiPerFET™, PolarHT™
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FDS8817NZ
ON Semiconductor, N-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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SIR474DP-T1-GE3
Vishay Siliconix, N-Channel 30V 20A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount, TrenchFET®
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