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SQM120N10-3M8_GE3

SQM120N10-3M8_GE3

Part NumberSQM120N10-3M8_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 120A TO263

DatasheetSQM120N10-3M8

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

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SQM120N10-3M8_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQM120N10-3M8
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7230pF @ 25V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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