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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120N10-3M8
Standard Package 800
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7230pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSH103,215
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Diodes Incorporated, N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252,
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Toshiba Semiconductor and Storage, N-Channel 38V 2A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIV
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STMicroelectronics, N-Channel 900V 11A (Tc) 230W (Tc) Through Hole TO-247-3, SuperMESH™
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Vishay Siliconix, N-Channel 60V 10.3A (Ta), 12A (Tc) 3.6W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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