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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120P04-04L-GE3
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13980pF @ 20V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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NTK3139PT1G
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SI2399DS-T1-GE3
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IRFR5305TRLPBF
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DMP2104V-7
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SUM90P10-19L-E3
Vishay Siliconix, P-Channel 100V 90A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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SSM3J334R,LF
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