Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

Part NumberSQS401ENW-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 16A POWERPAK1212

DatasheetSQS401ENW

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SQS401ENW-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS401ENW-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS401ENW-T1_GE3.
We are offering SQS401ENW-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQS401ENW-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQS401ENW
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.2nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1875pF @ 20V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SQS401ENW-T1_GE3 - Related Products

	FDC658AP	ON Semiconductor, P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	SUM110P04-04L-E3	Vishay Siliconix, P-Channel 40V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	IRFR5305TRPBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SSM6J507NU,LF	Toshiba Semiconductor and Storage, P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View
	CSD23202W10	Texas Instruments, P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™	View
	CSD22205LT	Texas Instruments, P-Channel 8V 7.4A (Ta) 600mW (Ta) Surface Mount 4-PICOSTAR, NexFET™	View
	SI4435DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	RTE002P02TL	Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3,	View
	SSM3J355R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII	View
	SI7121DN-T1-GE3	Vishay Siliconix, P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	ZVP4424GTA	Diodes Incorporated, P-Channel 240V 480mA (Ta) 2.5W (Ta) Surface Mount SOT-223,	View
	DMP2008UFG-7	Diodes Incorporated, P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8,	View

SQS401ENW-T1_GE3 - Tags

SQS401ENW-T1_GE3 SQS401ENW-T1_GE3 PDF SQS401ENW-T1_GE3 datasheet SQS401ENW-T1_GE3 specification SQS401ENW-T1_GE3 image SQS401ENW-T1_GE3 India Renesas Electronics India SQS401ENW-T1_GE3 buy SQS401ENW-T1_GE3 SQS401ENW-T1_GE3 price SQS401ENW-T1_GE3 distributor SQS401ENW-T1_GE3 supplier SQS401ENW-T1_GE3 wholesales