Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQS481ENW-T1_GE3

SQS481ENW-T1_GE3

SQS481ENW-T1_GE3

Part NumberSQS481ENW-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 4.7A 1212-8

DatasheetSQS481ENW

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SQS481ENW-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS481ENW-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS481ENW-T1_GE3.
We are offering SQS481ENW-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQS481ENW-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQS481ENW
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	385pF @ 75V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SQS481ENW-T1_GE3 - Related Products

	DMG2305UX-7	Diodes Incorporated, P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SOT-23,	View
	CPH6350-TL-W	ON Semiconductor, P-Channel 30V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH,	View
	IRLTS2242TRPBF	Infineon Technologies, P-Channel 20V 6.9A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®	View
	IRF9317TRPBF	Infineon Technologies, P-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	STL8P4LLF6	STMicroelectronics, P-Channel 40V 2.9W (Ta) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ F6	View
	SI4825DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	FDWS9510L-F085	ON Semiconductor, P-Channel 40V 50A (Tc) 75W (Tj) Surface Mount 8-DFN (5.1x6.3), PowerTrench®	View
	SI2371EDS-T1-GE3	Vishay Siliconix, P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®	View
	SI8499DB-T2-E1	Vishay Siliconix, P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®	View
	NDS9407	ON Semiconductor, P-Channel 60V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SI4465ADY-T1-GE3	Vishay Siliconix, P-Channel 8V 3W (Ta), 6.5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI2309CDS-T1-E3	Vishay Siliconix, P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View

SQS481ENW-T1_GE3 - Tags

SQS481ENW-T1_GE3 SQS481ENW-T1_GE3 PDF SQS481ENW-T1_GE3 datasheet SQS481ENW-T1_GE3 specification SQS481ENW-T1_GE3 image SQS481ENW-T1_GE3 India Renesas Electronics India SQS481ENW-T1_GE3 buy SQS481ENW-T1_GE3 SQS481ENW-T1_GE3 price SQS481ENW-T1_GE3 distributor SQS481ENW-T1_GE3 supplier SQS481ENW-T1_GE3 wholesales