Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3J35MFV
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	π-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Rds On (Max) @ Id, Vgs	8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	12.2pF @ 3V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723

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SSM3J35MFV,L3F

Part NumberSSM3J35MFV,L3F