Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM6H19NU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Rds On (Max) @ Id, Vgs	185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.2V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	130pF @ 10V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-UDFN (2x2)
Package / Case	6-UDFN Exposed Pad

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SSM6H19NU,LF

Part NumberSSM6H19NU,LF