Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM6J207FE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSII
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	251mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	137pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6 (1.6x1.6)
Package / Case	SOT-563, SOT-666

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SSM6J207FE,LF

Part NumberSSM6J207FE,LF