Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM6J511NU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVII
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Rds On (Max) @ Id, Vgs	9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	47nC @ 4.5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	3350pF @ 6V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-UDFNB (2x2)
Package / Case	6-WDFN Exposed Pad

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PMZB320UPEYL	Nexperia USA Inc., P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3,	View
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SSM6J511NU,LF

Part NumberSSM6J511NU,LF