Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM6K202FE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Rds On (Max) @ Id, Vgs	85mOhm @ 1.5A, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6 (1.6x1.6)
Package / Case	SOT-563, SOT-666

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STD16NF25	STMicroelectronics, N-Channel 250V 14A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View
IXTH130N15X4	IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Through Hole TO-247,	View
NTD4904NT4G	ON Semiconductor, N-Channel 30V 13A (Ta), 79A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK,	View
IRFR7546TRPBF	Infineon Technologies, N-Channel 60V 56A (Tc) 99W (Tc) Surface Mount DPAK, StrongIRFET™	View
FCPF400N60	ON Semiconductor, N-Channel 600V 10A (Tc) 31W (Tc) Through Hole TO-220F, SuperFET® II	View
BSS139H6327XTSA1	Infineon Technologies, N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
FDP060AN08A0	ON Semiconductor, N-Channel 75V 16A (Ta), 80A (Tc) 255W (Tc) Through Hole TO-220-3, PowerTrench®	View
PSMN3R0-60ES,127	Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Through Hole I2PAK,	View

SSM6K202FE,LF

Part NumberSSM6K202FE,LF