SSM6N35AFE,LF

Part NumberSSM6N35AFE,LF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SSM6N35AFE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Rds On (Max) @ Id, Vgs	1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 10V
Power - Max	250mW
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6

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