SSU1N60BTU-WS

Part NumberSSU1N60BTU-WS

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 0.9A IPAK

DatasheetSS(R,U)1N60B

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK

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SSU1N60BTU-WS - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SS(R,U)1N60B

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

900mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12Ohm @ 450mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

215pF @ 25V

FET Feature

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

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