STB35N65DM2
STB35N65DM2
Part Number STB35N65DM2 Description NCHANNEL 650 V 0.094 OHM TYP. 28 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 28A (Tc) 210W (Tc) Surface Mount D2PAK
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STB35N65DM2 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package 1 Manufacturer STMicroelectronics Series MDmesh™ M2 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 100V FET Feature - Power Dissipation (Max) 210W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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