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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB36NM60N
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ II
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 83.6nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
FET Feature -
Power Dissipation (Max) 210W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK8Q65W,S1Q
Toshiba Semiconductor and Storage, N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK, DTMOSIV
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ON Semiconductor, N-Channel 30V 19A (Ta), 22A (Tc) 2.5W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™
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FDS5351
ON Semiconductor, N-Channel 60V 6.1A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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Infineon Technologies, N-Channel 650V 15.1A (Tc) 118W (Tc) Surface Mount PG-TO252-3, CoolMOS™
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Infineon Technologies, N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
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DMN10H170SK3Q-13
Diodes Incorporated, N-Channel 100V 12A (Tc) 42W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
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IRF1404LPBF
Infineon Technologies, N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262, HEXFET®
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NTTFS4C05NTAG
ON Semiconductor, N-Channel 30V 12A (Ta), 75A (Tc) 820mW (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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