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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB36NM60N
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ II
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 83.6nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
FET Feature -
Power Dissipation (Max) 210W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD47N10F7AG
STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™ F7
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NTD4808N-1G
ON Semiconductor, N-Channel 30V 10A (Ta), 63A (Tc) 1.4W (Ta), 54.6W (Tc) Through Hole I-PAK,
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BSN20-7
Diodes Incorporated, N-Channel 50V 500mA (Ta) 600mW (Ta) Surface Mount SOT-23,
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BSS606NH6327XTSA1
Infineon Technologies, N-Channel 60V 3.2A (Ta) 1W (Ta) Surface Mount PG-SOT89, OptiMOS™
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SIHP16N50C-E3
Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Through Hole TO-220AB,
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IRFIB5N65APBF
Vishay Siliconix, N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3,
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FCPF13N60NT
ON Semiconductor, N-Channel 600V 13A (Tc) 33.8W (Tc) Through Hole TO-220F, SuperMOS™
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IPB60R280P7ATMA1
Infineon Technologies, N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
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APT22F80B
Microsemi Corporation, N-Channel 800V 23A (Tc) 625W (Tc) Through Hole TO-247 [B],
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NX7002AKW,115
Nexperia USA Inc., N-Channel 60V 170mA (Ta) 220mW (Ta), 1.06W (Tc) Surface Mount SC-70,
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IRLR024
Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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IRFR3411TRPBF
Infineon Technologies, N-Channel 100V 32A (Tc) 130W (Tc) Surface Mount D-Pak, HEXFET®
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