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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB37N60DM2AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 100V
FET Feature -
Power Dissipation (Max) 210W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
2N7002ET1G
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BSZ088N03MSGATMA1
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SI1330EDL-T1-E3
Vishay Siliconix, N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®
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STB120NF10T4
STMicroelectronics, N-Channel 100V 110A (Tc) 312W (Tc) Surface Mount D2PAK, STripFET™ II
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BSC070N10NS3GATMA1
Infineon Technologies, N-Channel 100V 90A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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Vishay Siliconix, N-Channel 40V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®
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PHP29N08T,127
Nexperia USA Inc., N-Channel 75V 27A (Tc) 88W (Tc) Through Hole TO-220AB, TrenchMOS™
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IPD079N06L3GBTMA1
Infineon Technologies, N-Channel 60V 50A (Tc) 79W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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SIS184DN-T1-GE3
Vishay Siliconix, N-Channel 60V 17.4A (Ta), 65.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S, TrenchFET® Gen IV
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