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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB45N60DM2AG
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Through Hole ITO-220AB,
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SI4630DY-T1-GE3
Vishay Siliconix, N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
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SQJ486EP-T1_GE3
Vishay Siliconix, N-Channel 75V 30A (Tc) 56W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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