STB4NK60Z-1
STB4NK60Z-1
Part Number STB4NK60Z-1 Description MOSFET N-CH 600V 4A I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 4A (Tc) 70W (Tc) Through Hole I2PAK
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STB4NK60Z-1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx4NK60Z(FP,-1) Standard Package 50 Manufacturer STMicroelectronics Series SuperMESH™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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