STB4NK60Z-1
STB4NK60Z-1
Part Number STB4NK60Z-1
Description MOSFET N-CH 600V 4A I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 4A (Tc) 70W (Tc) Through Hole I2PAK
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STB4NK60Z-1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx4NK60Z(FP,-1)
Standard Package 50
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging Tube
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
FET Feature -
Power Dissipation (Max) 70W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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