STB7ANM60N

Part NumberSTB7ANM60N

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STx7ANM60N
Standard Package	1
Manufacturer	STMicroelectronics
Series	MDmesh™ II
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	363pF @ 50V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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