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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STD4NK100Z
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, SuperMESH™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 601pF @ 25V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STW45N60DM2AG
STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2
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NTD20N06T4G
ON Semiconductor, N-Channel 60V 20A (Ta) 1.88W (Ta), 60W (Tj) Surface Mount DPAK,
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DMN65D8LW-7
Diodes Incorporated, N-Channel 60V 300mA (Ta) 300mW (Ta) Surface Mount SOT-323,
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SIHF12N60E-GE3
Vishay Siliconix, N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,
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IRFU220PBF
Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
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IPD530N15N3GATMA1
Infineon Technologies, N-Channel 150V 21A (Tc) 68W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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FDPF8N60ZUT
ON Semiconductor, N-Channel 600V 6.5A (Tc) 34.5W (Tc) Through Hole TO-220F, UniFET™
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PMF370XN,115
Nexperia USA Inc., N-Channel 30V 870mA (Tc) 560mW (Tc) Surface Mount SC-70, TrenchMOS™
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PMPB20XNEAZ
Nexperia USA Inc., N-Channel 20V 7.5A (Ta) 460mW (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101
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TK100L60W,VQ
Toshiba Semiconductor and Storage, N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L), DTMOSIV
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SIR462DP-T1-GE3
Vishay Siliconix, N-Channel 30V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IXFX240N25X3
IXYS, N-Channel 250V 240A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
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