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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH265N6F6-2AG/6AG
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ F6
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11800pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFN36N100
IXYS, N-Channel 1000V 36A (Tc) 700W (Tc) Chassis Mount SOT-227B, HiPerFET™
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STF7N60M2
STMicroelectronics, N-Channel 600V 5A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
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IRFB7537PBF
Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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ZXMN6A08KTC
Diodes Incorporated, N-Channel 60V 5.36A (Ta) 2.12W (Ta) Surface Mount TO-252-3,
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IRFR430ATRPBF
Vishay Siliconix, N-Channel 500V 5A (Tc) 110W (Tc) Surface Mount,
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SIRA10BDP-T1-GE3
Vishay Siliconix, N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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SIR470DP-T1-GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IRFB4137PBF
Infineon Technologies, N-Channel 300V 38A (Tc) 341W (Tc) Through Hole TO-220, HEXFET®
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PSMN2R0-30YLDX
Nexperia USA Inc., N-Channel 30V 100A (Tc) 142W (Tc) Surface Mount LFPAK56, Power-SO8,
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DMT10H010LK3-13
Diodes Incorporated, N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO-252, (D-Pak),
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DMN26D0UT-7
Diodes Incorporated, N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523,
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FCP150N65F
ON Semiconductor, N-Channel 650V 24A (Tc) 298W (Tc) Through Hole TO-220-3, HiPerFET™, Polar™
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