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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH290N4F6-2AG, 6AG Datasheet
Standard Package 1
Manufacturer STMicroelectronics
Series STripFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7380pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSC032N04LSATMA1
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IXFN106N20
IXYS, N-Channel 200V 106A (Tc) 521W (Tc) Chassis Mount SOT-227B, HiPerFET™
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FQB11N40CTM
ON Semiconductor, N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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SI7892BDP-T1-E3
Vishay Siliconix, N-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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STV270N4F3
STMicroelectronics, N-Channel 40V 270A (Tc) 300W (Tc) Surface Mount 10-PowerSO, STripFET™ III
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SIS468DN-T1-GE3
Vishay Siliconix, N-Channel 80V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IRF3805STRL-7PP
Infineon Technologies, N-Channel 55V 160A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
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IRF840ASTRLPBF
Vishay Siliconix, N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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FQB19N20CTM
ON Semiconductor, N-Channel 200V 19A (Tc) 3.13W (Ta), 139W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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TK290A60Y,S4X
Toshiba Semiconductor and Storage, N-Channel 600V 11.5A (Tc) 35W (Tc) Through Hole TO-220SIS, DTMOSV
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STL4N10F7
STMicroelectronics, N-Channel 100V 4.5A (Ta), 18A (Tc) 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3), DeepGATE™, STripFET™ VII
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BSZ130N03MSGATMA1
Infineon Technologies, N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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