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STH315N10F7-6

STH315N10F7-6

Part NumberSTH315N10F7-6

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 100V 180A H2PAK-6

DatasheetSTH315N10F7-2,STH315N10F7-6

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

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STH315N10F7-6 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STH315N10F7-2,STH315N10F7-6
Standard Package	1
Manufacturer	STMicroelectronics
Series	DeepGATE™, STripFET™ VII
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12800pF @ 25V
FET Feature	-
Power Dissipation (Max)	315W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2PAK-6
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)

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