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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH410N4F7-2AG, STH410N4F7-6AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ F7
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V
FET Feature -
Power Dissipation (Max) 365W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9Y12-55B,115
Nexperia USA Inc., N-Channel 55V 61.8A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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SI7456DP-T1-E3
Vishay Siliconix, N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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FCP190N65S3
ON Semiconductor, N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-220-3, SuperFET® III
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STF35N60DM2
STMicroelectronics, N-Channel 600V 28A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ DM2
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SIHA240N60E-GE3
Vishay Siliconix, N-Channel 600V 12A (Tc) 31W (Tc) Through Hole TO-220 Full Pack,
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IXTF02N450
IXYS, N-Channel 4500V 200mA (Tc) 78W (Tc) Through Hole ISOPLUS i4-PAC™,
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STW26NM60N
STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3, MDmesh™ II
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FDA59N30
ON Semiconductor, N-Channel 300V 59A (Tc) 500W (Tc) Through Hole TO-3PN, UniFET™
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FCPF9N60NT
ON Semiconductor, N-Channel 600V 9A (Tc) 29.8W (Tc) Through Hole TO-220F, SuperMOS™
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NVD3055L170T4G
ON Semiconductor, N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK,
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BSC007N04LS6ATMA1
Infineon Technologies, N-Channel 40V 100A 188W Surface Mount PG-TDSON-8-6, OptiMOS™
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IPB017N06N3GATMA1
Infineon Technologies, N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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