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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH410N4F7-2AG, STH410N4F7-6AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ F7
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V
FET Feature -
Power Dissipation (Max) 365W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII
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