Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ STP27N60M2-EP

STP27N60M2-EP

STP27N60M2-EP

Part NumberSTP27N60M2-EP

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 20A TO-220

DatasheetST(P,W)27N60M2-EP Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-220

To learn about the specification of STP27N60M2-EP, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STP27N60M2-EP with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STP27N60M2-EP.
We are offering STP27N60M2-EP for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

STP27N60M2-EP - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	ST(P,W)27N60M2-EP Datasheet
Standard Package	50
Manufacturer	STMicroelectronics
Series	MDmesh™ M2-EP
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 100V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

STP27N60M2-EP - Related Products

	IRFZ44SPBF	Vishay Siliconix, N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	BSC022N04LSATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	SI7636DP-T1-E3	Vishay Siliconix, N-Channel 30V 17A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SQS462EN-T1_GE3	Vishay Siliconix, N-Channel 60V 8A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	IXTH130N10T	IXYS, N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-247 (IXTH), TrenchMV™	View
	IRF8788TRPBF	Infineon Technologies, N-Channel 30V 24A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	DMN2028USS-13	Diodes Incorporated, N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO,	View
	DMN63D8LW-7	Diodes Incorporated, N-Channel 30V 380mA (Ta) 300mW (Ta) Surface Mount SOT-323,	View
	FQU2N100TU	ON Semiconductor, N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK, QFET®	View
	SIHP22N65E-GE3	Vishay Siliconix, N-Channel 650V 22A (Tc) 227W (Tc) Through Hole TO-220AB,	View
	SQP120N10-3M8_GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-220AB,	View
	SSM3K37FS,LF	Toshiba Semiconductor and Storage, N-Channel 20V 200mA (Ta) 100mW (Ta) Surface Mount SSM, U-MOSIII	View

STP27N60M2-EP - Tags

STP27N60M2-EP STP27N60M2-EP PDF STP27N60M2-EP datasheet STP27N60M2-EP specification STP27N60M2-EP image STP27N60M2-EP India Renesas Electronics India STP27N60M2-EP buy STP27N60M2-EP STP27N60M2-EP price STP27N60M2-EP distributor STP27N60M2-EP supplier STP27N60M2-EP wholesales