STQ1NK80ZR-AP
STQ1NK80ZR-AP
Part Number STQ1NK80ZR-AP
Description MOSFET N-CH 800V 0.3A TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
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STQ1NK80ZR-AP - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx1NK80ZR(R-AP,-1)
Standard Package 1
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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