STU1HN60K3
STU1HN60K3
Part Number STU1HN60K3
Description MOSFET N-CH 600V 1.2A IPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 1.2A (Tc) 27W (Tc) Through Hole I-PAK
To learn about the specification of STU1HN60K3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STU1HN60K3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STU1HN60K3.
We are offering STU1HN60K3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
STU1HN60K3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STD1HN60K3, STU1HN60K3
Standard Package 75
Manufacturer STMicroelectronics
Series SuperMESH3™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V
FET Feature -
Power Dissipation (Max) 27W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
STU1HN60K3 - Related ProductsMore >>
PSMN3R8-100BS,118
Nexperia USA Inc., N-Channel 100V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
View
STP8N80K5
STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220, SuperMESH5™
View
APT60N60BCSG
Microsemi Corporation, N-Channel 600V 60A (Tc) 431W (Tc) Through Hole TO-247 [B],
View
BSS123W-7-F
Diodes Incorporated, N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323,
View
STP36NF06L
STMicroelectronics, N-Channel 60V 30A (Tc) 70W (Tc) Through Hole TO-220AB, STripFET™ II
View
CSD18536KTT
Texas Instruments, N-Channel 60V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
View
SI4874BDY-T1-E3
Vishay Siliconix, N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
View
NDB5060L
ON Semiconductor, N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263AB),
View
STQ1NK60ZR-AP
STMicroelectronics, N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™
View
TK10A60W5,S5VX
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV
View
STB8N65M5
STMicroelectronics, N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D2PAK, MDmesh™ V
View
TK65S04N1L,LQ
Toshiba Semiconductor and Storage, N-Channel 40V 65A (Ta) 107W (Tc) Surface Mount DPAK+, U-MOSVIII-H
View
STU1HN60K3 - Tags