STW56N65M2
STW56N65M2
Part Number STW56N65M2 Description MOSFET N-CH 650V 49A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247
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STW56N65M2 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STW56N65M2 Standard Package 30 Manufacturer STMicroelectronics Series MDmesh™ M2 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 62mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 100V FET Feature - Power Dissipation (Max) 358W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
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