STW65N65DM2AG
STW65N65DM2AG
Part Number STW65N65DM2AG Description MOSFET N-CH 650V 60A Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 60A (Tc) 446W (Tc) Through Hole TO-247
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STW65N65DM2AG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STW65N65DM2AG Standard Package 30 Manufacturer STMicroelectronics Series Automotive, AEC-Q101, MDmesh™ DM2 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 100V FET Feature - Power Dissipation (Max) 446W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
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