STY100NM60N
STY100NM60N
Part Number STY100NM60N Description MOSFET N CH 600V 98A MAX247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 98A (Tc) 625W (Tc) Through Hole MAX247™
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STY100NM60N - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STY100NM60N Standard Package 30 Manufacturer STMicroelectronics Series MDmesh™ II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 98A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 49A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V Vgs (Max) 25V Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 50V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3
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